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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 20* i d @ v gs = 12v, t c = 100c continuous drain current 19 i dm pulsed drain current ? 80 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 76 mj i ar avalanche current ? 20 a e ar repetitive avalanche energy ? 7.5 mj dv/dt p eak diode recovery dv/dt ? 3.8 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. /1.6 mm from case for 10s) weight 4.3 (typical) g o c a 03/25/04 www.irf.com 1 technology product summary part number radiation level r ds(on) i d irhyb67130cm 100k rads (si) 0.042 ? 20a* irhyb63130cm 300k rads (si) 0.042 ? 20a* irhyb64130cm 600k rads (si) 0.042 ? 20a* IRHYB68130CM 1000k rads (si) 0.042 ? 20a* for footnotes refer to the last page pre-irradiation radiation hardened irhyb67130cm power mosfet 100v, n-channel thru-hole (low-ohmic to-257aa) features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets electrically isolated light weight international rectifier?s r6 tm technology provides superior power mosfets for space applications. these devices have improved immunity to single event effect (see) and have been characterized for useful performance with linear energy transfer (let) up to 90mev/(mg/cm 2 ). their combination of very low r ds(on) and faster switching times reduces power loss and increases power density in today?s high speed switching applications such as dc-dc converters and motor controllers. these devices retain all of the well established advantages of mosfets such as voltage control, ease of paralleling and temperature stability of electrical parameters. low-ohmic to-257aa tabless * current is limited by package pd - 95841
irhyb67130cm pre-irradiation 2 www.irf.com source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 20* i sm pulse source current (body diode) ? ?? 80 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 20a, v gs = 0v ? t rr reverse recovery time ? ? 250 ns t j = 25c, i f = 20a, di/dt 100a/ s q rr reverse recovery charge ? ? 2.7 cv dd 25v ? t on forward tu rn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.12 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.042 ? v gs = 12v, i d = 19a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 14 ? ? s ( ) v ds = 15v, i ds = 19a ? i dss zero gate voltage drain current ? ? 10 v ds = 80v ,v gs =0v ??25 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 50 v gs =12v, i d = 20a q gs gate-to-source charge ? ? 15 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 12 t d (on) turn-on delay time ? ? 20 v dd = 50v, i d = 20a t r rise time ? ? 50 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 35 t f fall time ? ? 15 l s + l d total inductance ? 6.8 ? measured from drain lead (6mm / 0.25in . from package) to source lead ( 6mm /0.25in. from package) c iss input capacitance ? 1710 ? v gs = 0v, v ds = 25v c oss output capacitance ? 343 ? p f f = 1.0mhz c rss reverse transf er capacitance ? 6.5 ? r g internal gate resistance ? 1.1 ? ? f = 1.0mhz, open drain na ? ? nh ns a note: corresponding spice and saber models are available on international rectifier web site. thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 1.67 r thja junction-to-ambient ? ? 80 typical socket mount c/w * current is limited by package
www.irf.com 3 pre-irradiation irhyb67130cm table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter up to 600k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 ? 100 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 25 a v ds = 80v, v gs =0v r ds(on) static drain-to-source ? ? 0.044 ? 0.054 ? v gs = 12v, i d = 19a on-state resistance (to-3) r ds(on) static drain-to-source on-state ? ? 0.042 ? 0.052 ? v gs = 12v, i d = 19a resistance (low ohmic to-257aa) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhyb67130cm, irhyb63130cm and irhyb64130cm 2. part number IRHYB68130CM fig a. single event effect, safe operating area v sd diode forward voltage ? ? 1.2 ? 1.2 v v gs = 0v, i s = 20a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range vds (v) (mev/(mg/cm2)) (mev) (m) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v -5v -10v -15v -17v -19v -20v br 36.7 309 39.5 100 100 100 100 100 100 40 i 59.8 341 32.5 100 100 100 30 - - - au 82.3 350 28.4 100 100 - - - - - 0 20 40 60 80 100 120 -20 -15 -10 -5 0 vgs vds br i au
irhyb67130cm pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15

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www.irf.com 5 pre-irradiation irhyb67130cm 6 100khz fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage

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irhyb67130cm pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v gs 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. dut y factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse ( thermal response ) 25 50 75 100 125 150 0 5 10 15 20 25 30 35 t , case temperature ( c) i , drain current (a) c d limited by package
www.irf.com 7 pre-irradiation irhyb67130cm q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v . v gs &# # .# &# #
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irhyb67130cm pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 25v, starting t j = 25c, l= 0.38mh peak i l = 20a, v gs = 12v ? i sd 20a, di/dt 380a/ s, v dd 1 00v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/2004 not es : 1. dime ns ioning & t olerancing per ans i y14.5m-1994. 2. cont rol l ing dimens ion: inch. 3. dime ns ions ar e s hown i n mi l l ime t e r s [ inch e s ]. 4. out line conf orms t o jedec out line t o-257aa. lead assignments 2 = source 1 = drain 3 = gate case outline and dimensions ? low-ohmic to-257aa ( tabless) 0.88 [.035] 0.64 [.025] 123 ? 0.50 [.020] b a 3x ? 2.54 [.100] 10.66 [.420] 10.42 [.410] a 5.08 [.200] 4.83 [.190] b 10.92 [.430] 10.42 [.410] 15.88 [.625] 12.70 [.500] 2x 0.71 [.028] max. 0.13 [.005] 3.05 [.120] c

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